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/p-AlInGaP solar cellsLee, H. S.*; Yamaguchi, Masafumi*; Ekins-Daukes, N. J.*; Khan, A.*; Takamoto, Tatsuya*; Imaizumi, Mitsuru*; Oshima, Takeshi; Ito, Hisayoshi
Physica B; Condensed Matter, 376-377, p.564 - 567, 2006/04
Times Cited Count：2 Percentile：12.56(Physics, Condensed Matter)no abstracts in English
Lee, H. S.*; Ekins-Daukes, N. J.*; Sasaki, Takuo*; Yamaguchi, Masafumi*; Khan, A.*; Takamoto, Tatsuya*; Agui, Takaaki*; Kamimura, Kunio*; Kaneiwa, Minoru*; Imaizumi, Mitsuru*; et al.
Proceedings of 31st IEEE Photovoltaic Specialists Conference and Exhibition (PVSC-31), p.556 - 558, 2005/00
no abstracts in English
Ekins-Daukes, N. J.*; Arafune, Koji*; Lee, H. S.*; Sasaki, Takuo*; Yamaguchi, Masafumi*; Khan, A.*; Takamoto, Tatsuya*; Agui, Takaaki*; Kamimura, Kunio*; Kaneiwa, Minoru*; et al.
Proceedings of 31st IEEE Photovoltaic Specialists Conference and Exhibition (PVSC-31), p.683 - 686, 2005/00
no abstracts in English
Ekins-Daukes, N. J.*; Lee, H. S.*; Sasaki, Takuo*; Yamaguchi, Masafumi*; Khan, A.*; Takamoto, Tatsuya*; Agui, Takaaki*; Kamimura, Kunio*; Kaneiwa, Minoru*; Imaizumi, Mitsuru*; et al.
Proceedings of the 6th International Workshop on Radiation Effects on Semiconductor Devices for Space Application (RASEDA-6), p.87 - 91, 2004/10
no abstracts in English
Ekins-Daukes, N. J.*; Lee, H. S.*; Sasaki, Takuo*; Yamaguchi, Masafumi*; Khan, A.*; Takamoto, Tatsuya*; Agui, Takaaki*; Kamimura, Kunio*; Kaneiwa, Minoru*; Imaizumi, Mitsuru*; et al.
Applied Physics Letters, 85(13), p.2511 - 2513, 2004/09
Times Cited Count：11 Percentile：42.73(Physics, Applied)no abstracts in English
-InGaP space solar cellsDharmarasu, N.*; Yamaguchi, Masafumi*; Bourgoin, J. C.*; Takamoto, Tatsuya*; Oshima, Takeshi; Ito, Hisayoshi; Imaizumi, Mitsuru*; Matsuda, Sumio*
Applied Physics Letters, 81(1), p.64 - 66, 2002/07
Times Cited Count：17 Percentile：55.81(Physics, Applied)We studied the properties of observed defects in n/p-InGaP solar cells created by irradiation of protons with different energies.Three majority (hole) and a minority-carrier traps, labeled respectively as HP1 (E
+0.90
0.05eV), HP2 (E+0.730.05eV), H2 (E +0.55eV),and EP1 (E
0.54eV),were identified using deep level transient spectroscopy. All majority-carrier traps were found to act as recombination centers. While the H2 traps present in the proton-irradiated p-InGaP was found to anneal out by minority-carrier injection, the other traps were not.
InGaP solar CellsDharmarasu, N.*; Khan, A.*; Yamaguchi, Masafumi*; Takamoto, Tatsuya*; Oshima, Takeshi; Ito, Hisayoshi; Imaizumi, Mitsuru*; Matsuda, Sumio*
Journal of Applied Physics, 91(5), p.3306 - 3311, 2002/03
Times Cited Count：25 Percentile：66.93(Physics, Applied)3MeV proton irradiation effects on InGaP single junction and InGaP/GaAs two junction cells were studied. The degradation of electrocal properties for InGaP cells was smaller than that for InGaP/GaAs cells. The results of the measurement of spectral response showed the large degradation in long wavelength. This indicates that GaAs cell degrades. The Damage coefficient of minority carrier diffusion length was estimated to be 7.9
10
for InGaP and 1.610
for GaAs. These values of the damage coefficient for InGaP and GaAs are 580 times and 280 times larger than those for InGaP and GaAs irradiated with 1MeV electrons.
